Mask free protection of work function material portions in wide replacement gate electrodes
US8629511B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 15, 2012 |
| Grant date | Jan 14, 2014 |
| Priority date | — |
| Expiry date | Jul 5, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/215
- WIPO fieldCivil engineering
- WIPO sectorOther fields
Abstract
In a replacement gate scheme, after formation of a gate dielectric layer, a work function material layer completely fills a narrow gate trench, while not filling a wide gate trench. A dielectric material layer is deposited and planarized over the work function material layer, and is subsequently recessed to form a dielectric material portion overlying a horizontal portion of the work function material layer within the wide gate trench. The work function material layer is recessed employing the dielectric material portion as a part of an etch mask to form work function material portions. A conductive material is deposited and planarized to form gate conductor portions, and a dielectric material is deposited and planarized to form gate cap dielectrics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.