Method and system of heterogeneous substrate bonding for photonic integration
US8630326B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2010 |
| Grant date | Jan 14, 2014 |
| Priority date | — |
| Expiry date | Dec 15, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A hybrid integrated optical device includes a substrate comprising a silicon layer and a compound semiconductor device bonded to the silicon layer. The device also includes a bonding region disposed between the silicon layer and the compound semiconductor device. The bonding region includes a metal-semiconductor bond at a first portion of the bonding region. The metal-semiconductor bond includes a first pad bonded to the silicon layer, a bonding metal bonded to the first pad, and a second pad bonded to the bonding metal and the compound semiconductor device. The bonding region also includes an interface assisted bond at a second portion of the bonding region. The interface assisted bond includes an interface layer positioned between the silicon layer and the compound semiconductor device, wherein the interface assisted bond provides an ohmic contact between the silicon layer and the compound semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.