Methodology of optical proximity correction optimization
US8631360B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 17, 2012 |
| Grant date | Jan 14, 2014 |
| Priority date | — |
| Expiry date | Apr 17, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/70
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for performing OPC and evaluating OPC solutions is disclosed. An exemplary method includes receiving a design database corresponding to an IC circuit mask. A first lithography simulation and evaluation is performed on the design database utilizing a first set of performance indexes. A modification is made to the design database based on a result of performing the first lithography simulation and evaluation. A second lithography simulation and evaluation is performed on the design database utilizing a second set of performance indexes to verify the modification. If necessary, the design database is modified again based on a result of the second lithography simulation and evaluation. The modified design database is provided to a mask manufacturer for manufacturing the mask corresponding to the modified design database.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.