Fabricating photonics devices fully integrated into a CMOS manufacturing process
US8633067B2 · kind B2 · utility
44Cited by
12References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 22, 2010 |
| Grant date | Jan 21, 2014 |
| Priority date | — |
| Expiry date | Dec 3, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2658
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are process enhancements to fully integrate the processing of a photonics device into a CMOS manufacturing process flow. A CMOS wafer may be divided into different portions. One of the portions is for the CMOS devices and one or more other portions are for the photonics devices. The photonics devices include a ridged waveguide and a germanium photodetector. The germanium photodetector may utilize a seeded crystallization from melt process so there is more flexibility in the processing of the germanium photodetector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.