Method for forming substrate with buried insulating layer

US8633090B2 · kind B2 · utility

Assignees

• Shanghai Simgui Technology Co., Ltd. · CN
• SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Xiang Wang · Keyano, CA
• Xing Wei · Xi'an, CN
• Miao Zhang · Beijing, CN
• Chenglu Lin · Huangpu District, CN
• Xi Wang · Beijing, CN

Key dates

• Filing date: Jul 10, 2010
• Grant date: Jan 21, 2014
• Expiry date: Aug 26, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76256
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for forming an edge-chamfered substrate with a buried insulating layer is provided, which comprises the following steps: providing a first substrate (S10); forming an etching mask layer on surfaces of the first substrate, wherein said etching mask layer is formed on the whole surfaces of the first substrate (S11); chamfering a glazed surface of the first substrate and the etching mask layer thereon by the edge grinding (S12); by rotary etching, etching the first substrate which is exposed by the edge grinding on the etching mask layer (S13); providing a second substrate (S14); and bonding the first substrate to the second substrate with a buried insulating layer (S15). The method avoids the edge collapses and the changes of the warp degree in subsequent processes.