Methods for atomic layer etching
US8633115B2 · kind B2 · utility
504Cited by
5References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2011 |
| Grant date | Jan 21, 2014 |
| Priority date | — |
| Expiry date | Mar 14, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67207
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are methods of etching a substrate using atomic layer deposition apparatus. Atomic layer deposition apparatus including a gas distribution plate with a thermal element are discussed. The thermal element is capable of locally changing the temperature of a portion of the surface of the substrate to vaporize an etch layer deposited on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.