Sputter and surface modification etch processing for metal patterning in integrated circuits
US8633117B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 7, 2012 |
| Grant date | Jan 21, 2014 |
| Priority date | — |
| Expiry date | Nov 7, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, fabricating conductive lines in an integrated circuit includes providing a layer of conductive metal in a multi-layer structure fabricated upon a wafer and sputter etching the conductive metal using methanol plasma, wherein a portion of the conductive metal that remains after the sputter etching forms the conductive lines. In another embodiment, fabricating conductive lines in an integrated circuit includes providing a layer of conductive metal in a multi-layer structure fabricated upon a wafer, wherein the layer of conductive metal is an intermediate layer in the multi-layer structure, etching the multi-layer structure to expose the conductive metal, sputter etching conductive metal using methanol plasma, wherein a portion of the conductive metal that remains after the sputter etching forms the conductive lines, forming a liner that surrounds the conductive lines, subsequent to the sputter etching, and depositing a dielectric layer on the multi-layer structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.