Plasma processing apparatus, plasma processing method and storage medium
US8636871B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2007 |
| Grant date | Jan 28, 2014 |
| Priority date | — |
| Expiry date | Feb 20, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32541
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus includes a first electrode and a second electrode so arranged in the upper portion of a processing chamber as to face a mounting table, a gas supply unit for supplying a processing gas between the first electrode and the second electrode, a RF power supply unit for applying a RF power between the first electrode and the second electrode for converting the process gas supplied between the electrodes into a plasma, and a gas exhaust unit for evacuating the inside of the processing chamber to a vacuum level from the lower portion of the processing chamber. Since the electron temperature in the plasma is low near a substrate on the mounting table, damage to the substrate caused by the plasma can be suppressed. In addition, since a metal can be used as a material for the processing chamber, the processing chamber can have good temperature controllability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.