Phase change memory with threshold switch select device
US8637342B2 · kind B2 · utility
3Cited by
1References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 10, 2005 |
| Grant date | Jan 28, 2014 |
| Priority date | — |
| Expiry date | Apr 26, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8413
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An ovonic threshold switch may be formed of a continuous chalcogenide layer. That layer spans multiple cells, forming a phase change memory. In other words, the ovonic threshold switch may be formed of a chalcogenide layer which extends, uninterrupted, over numerous cells of a phase change memory.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.