Semiconductor device heat dissipation structure

US8637388B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Michael J. Abou-Khalil · South Burlington, US
• Robert J. Gauthier, Jr. · South Burlington, US
• Tom C. Lee · South Burlington, US
• Junjun Li · Williston, US
• Souvick Mitra · South Burlington, US
• Christopher S. Putnam · South Burlington, US

Key dates

• Filing date: Jan 16, 2013
• Grant date: Jan 28, 2014
• Expiry date: Jan 16, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/12044
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A heat generating component of a semiconductor device is located between two heavily doped semiconductor regions in a semiconductor substrate. The heat generating component may be a middle portion of a diode having a light doping, a lightly doped p-n junction between a cathode and anode of a silicon controlled rectifier, or a resistive portion of a doped semiconductor resistor. At least one thermally conductive via comprising a metal or a non-metallic conductive material is place directly on the heat generating component. Alternatively, a thin dielectric layer may be formed between the heat generating component and the at least one thermally conductive via. The at least one thermally conductive via may, or may not, be connected to a back-end-of-line metal wire, which may be connected to higher level of metal wiring or to a handle substrate through a buried insulator layer.