Image transfer process employing a hard mask layer
US8637406B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2012 |
| Grant date | Jan 28, 2014 |
| Priority date | — |
| Expiry date | Jul 19, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24802
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
At least one mask layer formed over a substrate includes at least one of a dielectric material and a metallic material. By forming a first pattern in one of the at least one mask layer, a patterned mask layer including said first pattern is formed. An overlying structure including a second pattern that includes at least one blocking area is formed over said patterned mask layer. Portions of said patterned mask layer that do not underlie said blocking area are removed. The remaining portions of the patterned mask layer include a composite pattern that is an intersection of the first pattern and the second pattern. The patterned mask layer includes a dielectric material or a metallic material, and thus, enables high fidelity pattern transfer into an underlying material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.