Ryan O. Jung
32Patents
10h-index
40Co-inventors
71Inventor score
Filing activity: Oct 6, 2011 → Oct 27, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| USD868731S1 | Headphone | General | 77 | Active |
| USD869432S1 | Headphone | General | 35 | Active |
| USD908114S1 | Earbud headset | General | 31 | Active |
| US9362179B1 | Method to form dual channel semiconductor material fins | Electricity | 24 | Active |
| USD877721S1 | Pair of earbud headsets | General | 24 | Active |
| US9659786B2 | Gate cut with high selectivity to preserve interlevel dielectric layer | Electricity | 15 | Active |
| US9900680B2 | Wireless earbuds and related methods | Electricity | 14 | Active |
| US8735296B2 | Method of simultaneously forming multiple structures having different critical dimensions using sidewall transfer | Electricity | 13 | Active |
| US9318574B2 | Method and structure for enabling high aspect ratio sacrificial gates | Electricity | 11 | Active |
| US8673165B2 | Sidewall image transfer process with multiple critical dimensions | Electricity | 11 | Active |
| USD899399S1 | Earbud headset | General | 9 | Active |
| US9601335B2 | Trench formation for dielectric filled cut region | Electricity | 7 | Active |
| US9601366B2 | Trench formation for dielectric filled cut region | Electricity | 6 | Active |
| US9842739B2 | Method and structure for enabling high aspect ratio sacrificial gates | Electricity | 6 | Active |
| US9214360B2 | Methods of patterning features having differing widths | Electricity | 5 | Active |
| US9837276B2 | Gate cut with high selectivity to preserve interlevel dielectric layer | Electricity | 5 | Active |
| US9659779B2 | Method and structure for enabling high aspect ratio sacrificial gates | Electricity | 5 | Active |
| USD907597S1 | Earbud headset | General | 3 | Active |
| US9786666B2 | Method to form dual channel semiconductor material fins | Electricity | 3 | Active |
| US8637406B1 | Image transfer process employing a hard mask layer | Emerging Cross-Sectional Technologies | 1 | Active |
| US8716133B2 | Three photomask sidewall image transfer method | Electricity | 1 | Active |
| US9530864B2 | Junction overlap control in a semiconductor device using a sacrificial spacer layer | Electricity | 1 | Active |
| US9627277B2 | Method and structure for enabling controlled spacer RIE | Electricity | 0 | Active |
| US10957544B2 | Gate cut with high selectivity to preserve interlevel dielectric layer | Electricity | 0 | Active |
| US12339521B2 | Eyeglasses with associated true wireless earbuds | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.