Process to form an adhesion layer and multiphase ultra-low k dielectric material using PECVD
US8637412B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 19, 2011 |
| Grant date | Jan 28, 2014 |
| Priority date | — |
| Expiry date | Aug 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A first PECVD process incorporating a silicon oxide precursor alone and then with an organo-silicon precursor with increasing flow while the flow of the silicon oxide precursor is reduced to zero provides a graded carbon adhesion layer whereby the content of C increases with layer thickness and a second PECVD process incorporating an organo-silicon precursor including an organic porogen provides a multiphase ultra-low k dielectric. The multiphase ultra-low k PECVD process uses high frequency radio frequency power just above plasma initiation in a PECVD chamber. An energy post treatment is also provided. A porous SiCOH dielectric material having a k less than 2.7 and a modulus of elasticity greater than 7 GPa is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.