System and method for ion implantation with improved productivity and uniformity
US8637838B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2011 |
| Grant date | Jan 28, 2014 |
| Priority date | — |
| Expiry date | Jul 26, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31703
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A scanning system including a scanning element, a beam profiler, analysis system, and a ZFE-limiting element, is disclosed. The scanning element is configured to scan an ion beam over an ion beam scan path. The beam profiler measures beam current of the ion beam as it is scanned over the ion beam scan path, and the analysis system analyzes the measured beam current to detect a ZFE condition. The ZFE-limiting element, which is upstream of the beam profiler and is coupled to the analysis system via a feedback path, is configured to selectively apply an electric field to the scanned ion beam based on whether the ZFE condition is detected. The selectively applied electric field induces a change in the scanned beam to limit the ZFE condition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.