Semiconductor structure including a zirconium oxide material
US8637846B1 · kind B1 · utility
1Cited by
2References
26Claims
0Family size
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Key dates
| Filing date | Aug 31, 2012 |
| Grant date | Jan 28, 2014 |
| Priority date | — |
| Expiry date | Aug 31, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02565
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Semiconductor structures including a zirconium oxide material and methods of forming the same are described herein. As an example, a semiconductor structure can include a zirconium oxide material, a perovskite structure material, and a noble metal material formed between the zirconium oxide material and the perovskite structure material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.