Nonvolatile semiconductor memory
US8637915B2 · kind B2 · utility
6Cited by
0References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2011 |
| Grant date | Jan 28, 2014 |
| Priority date | — |
| Expiry date | Dec 13, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
Abstract
A nonvolatile semiconductor memory includes first and second memory cells having a floating gate and a control gate. The floating gate of the first and second memory cells is comprised a first part, and a second part arranged on the first part, and a width of the second part in an extending direction of the control gate is narrower than that of the first part. A first space between the first parts of the first and second memory cells is filled with one kind of an insulator. The control gate is arranged at a second space between the second parts of the first and second memory cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.