Patent · US Active

Semiconductor device

US8637922B1 · kind B1 · utility

24Cited by

4References

27Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Ralf Siemieniec · Villach, AT
Dethard Peters · Edenkoben, DE
Peter Friedrichs · Koblenzer Straße, DE

Key dates

Filing date	Jul 19, 2012
Grant date	Jan 28, 2014
Priority date	—
Expiry date	Jul 19, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/518
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A manufacturing method provides a semiconductor device having a semiconductor body defining a source region, a body region, a drift region and a diode region. The drift region has a first drift region section and a second drift region section. The diode region is buried within the drift region, and has a semiconductor type opposite to the drift region to form a diode. The diode region is separated from the gate electrode by the first drift region section extending from the diode region in a vertical direction. The gate electrode is adjacent the body region and insulated from the body region by a gate dielectric. A source electrode is electrically connected to the source region, the body region and the diode region. A semiconductor region of a doping type opposite to the doping type of the drift region is arranged between the first drift region section and the source electrode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.