Polishing composition for planarizing metal layer
US8641920B2 · kind B2 · utility
6Cited by
1References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 11, 2009 |
| Grant date | Feb 4, 2014 |
| Priority date | — |
| Expiry date | Apr 7, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09K3/1463
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A polishing composition of the present invention at least comprises about 750 ppm to less than 5000 ppm by weight of abrasive particles, hydrogen peroxide, an accelerator, a dual-corrosion inhibitor and water, wherein the dual-corrosion inhibitor contains a first and a second corrosion inhibitor. The dual-corrosion inhibitor is applied to the planarization of metal layers so as to maintain a high removal rate of metal layers as well as suppress etching of the metal, thus capable of reducing polishing defects such as dishing, erosion and the like.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.