Method of forming titanium nitride film
US8642127B2 · kind B2 · utility
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4References
7Claims
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Key dates
| Filing date | Feb 24, 2012 |
| Grant date | Feb 4, 2014 |
| Priority date | — |
| Expiry date | Mar 23, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28562
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
According to the method of forming a titanium nitride film, first, an inside of a reaction pipe accommodating a semiconductor wafer is heated up to 200° C. to 350° C. by using a temperature increasing heater. Then, the titanium nitride film is formed on the semiconductor wafer by supplying a film forming gas including a titanium raw material into the reaction pipe. Methylcyclopentadienyl tris(dimethylamino)titanium that does not include a chlorine atom and includes titanium is used as the titanium raw material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.