High-voltage-resistant semiconductor component having vertically conductive semiconductor body areas and a trench structure

US8643085B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventor

• Frank Pfirsch · Birkenfeld, DE

Key dates

• Filing date: Sep 23, 2005
• Grant date: Feb 4, 2014
• Expiry date: Mar 18, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256

Abstract

A high-voltage-resistant semiconductor component (1) has vertically conductive semiconductor areas (17) and a trench structure (5). These vertically conductive semiconductor areas are formed from semiconductor body areas (10) of a first conductivity type and are surrounded by a trench structure (5) on the upper face (6) of the semiconductor component. For this purpose the trench structure has a base (7) and a wall area (8) and is filled with a material (9) with a relatively high dielectric constant (εr). The base area (7) of the trench structure (5) is provided with a heavily doped semiconductor material (11) of the same conductivity type as the lightly doped semiconductor body areas (17), and/or having a metallically conductive material (12).