Patent · US Active

Integrated lateral high voltage MOSFET

US8643099B2 · kind B2 · utility

5Cited by

8References

8Claims

0Family size

Assignee

TEXAS INSTRUMENTS INCORPORATED · US

Inventors

Marie Denison · Plano, US
Sameer Pendharkar · Allen, US
Philip L. Hower · Concord, US

Key dates

Filing date	Jun 20, 2013
Grant date	Feb 4, 2014
Priority date	—
Expiry date	Jun 20, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/371
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An integrated circuit containing a dual drift layer extended drain MOS transistor with an upper drift layer contacting a lower drift layer along at least 75 percent of a common length of the two drift layers. An average doping density in the lower drift layer is between 2 and 10 times an average doping density in the upper drift layer. A process of forming an integrated circuit containing a dual drift layer extended drain MOS transistor with a lower drift extension under the body region and an isolation link which electrically isolates the body region, using an epitaxial process. A process of forming an integrated circuit containing a dual drift layer extended drain MOS transistor with a lower drift extension under the body region and an isolation link which electrically isolates the body region, on a monolithic substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.