Oxide-nitride-oxide stack having multiple oxynitride layers
US8643124B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2011 |
| Grant date | Feb 4, 2014 |
| Priority date | — |
| Expiry date | Jan 14, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including a silicon-oxide-oxynitride-oxide-silicon structure and methods of forming the same are provided. Generally, the structure comprises: a tunnel oxide layer on a surface of a substrate including silicon; a multi-layer charge storing layer including an oxygen-rich, first oxynitride layer on the tunnel oxide layer in which the stoichiometric composition of the first oxynitride layer results in it being substantially trap free, and an oxygen-lean, second oxynitride layer on the first oxynitride layer in which the stoichiometric composition of the second oxynitride layer results in it being trap dense; a blocking oxide layer on the second oxynitride layer; and a silicon containing gate layer on the blocking oxide layer. Other embodiments are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.