GaN-based Schottky barrier diode with field plate

US8643134B2 · kind B2 · utility

Assignee

• Avogy, Inc. · US

Inventors

• Madhan Raj · Cupertino, US
• Richard J. Brown · Los Gatos, US
• Thomas R. Prunty · Santa Clara, US
• David P. Bour · Cupertino, US
• Isik C. Kizilyalli · San Francisco, US
• Hui Nie · Cupertino, US
• Andrew P. Edwards · San Jose, US
• Linda Romano · Sunnyvale, US

Key dates

• Filing date: Nov 18, 2011
• Grant date: Feb 4, 2014
• Expiry date: Nov 18, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/111

Abstract

A method for fabricating a III-nitride semiconductor device includes providing a III-nitride substrate having a first surface and a second surface opposing the first surface, forming a III-nitride epitaxial layer coupled to the first surface of the III-nitride substrate, and removing at least a portion of the III-nitride epitaxial layer to form a first exposed surface. The method further includes forming a dielectric layer coupled to the first exposed surface, removing at least a portion of the dielectric layer, and forming a metallic layer coupled to a remaining portion of the dielectric layer such that the remaining portion of the dielectric layer is disposed between the III-nitride epitaxial layer and the metallic layer.