Passive devices for 3D non-volatile memory
US8643142B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2011 |
| Grant date | Feb 4, 2014 |
| Priority date | — |
| Expiry date | Feb 19, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/42
Abstract
Passive devices such as resistors and capacitors are provided for a 3D non-volatile memory device. In a peripheral area of a substrate, a passive device includes alternating layers of a dielectric such as oxide and a conductive material such as heavily doped polysilicon or metal silicide in a stack. The substrate includes one or more lower metal layers connected to circuitry. One or more upper metal layers are provided above the stack. Contact structures extend from the layers of conductive material to portions of the one or more upper metal layers so that the layers of conductive material are connected to one another in parallel, for a capacitor, or serially, for a resistor, by the contact structures and the at least one upper metal layer. Additional contact structures can connect the circuitry to the one or more upper metal layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.