Substrate processing method and substrate processing apparatus
US8647440B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 1, 2007 |
| Grant date | Feb 11, 2014 |
| Priority date | — |
| Expiry date | Oct 22, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76828
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a substrate treatment method intended for a substrate having, on its surface, a composite product of an inorganic material containing silicon oxide and an organic material containing carbon and fluorine. The method comprises: an ultraviolet ray treatment step for irradiating the surface of the substrate with ultraviolet ray to remove a part of the organic material; a hydrogen fluoride processing step which is conducted after the ultraviolet ray processing step and which is for supplying a steam of hydrogen fluoride onto the surface of the substrate to remove at least a part of the inorganic material; and a heating processing step which is conducted after the ultraviolet ray processing step and which is for heating the substrate to cause the shrinkage of a part of the organic material that remains unremoved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.