Enhanced non-noble electrode layers for DRAM capacitor cell

US8647943B2 · kind B2 · utility

Assignees

• INTERMOLECULAR, INC. · US
• ELPIDA MEMORY, INC. · JP

Inventors

• Hanhong Chen · Milpitas, US
• Wim Deweerd · San Jose, US
• Edward Haywood · San Jose, US
• Sandra G. Malhotra · San Jose, US
• Hiroyuki Ode · Kure, JP

Key dates

• Filing date: Jun 12, 2012
• Grant date: Feb 11, 2014
• Expiry date: Jun 12, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/696

Abstract

A metal oxide first electrode material for a MIM DRAM capacitor is formed wherein the first and/or second electrode materials or structures contain layers having one or more dopants up to a total doping concentration that will not prevent the electrode materials from crystallizing during a subsequent anneal step. Advantageously, the electrode doped with one or more of the dopants has a work function greater than about 5.0 eV. Advantageously, the electrode doped with one or more of the dopants has a resistivity less than about 1000 μΩ cm. Advantageously, the electrode materials are conductive molybdenum oxide.