Patent · US Active

Method for filling cavities in wafers, correspondingly filled blind hole and wafer having correspondingly filled insulation trenches

US8647961B2 · kind B2 · utility

0Cited by

3References

10Claims

0Family size

Assignee

Robert Bosch GmbH · DE

Inventors

Jens Frey · Echterdingen, DE
Heribert Weber · Leverkusen, DE
Eckhard Graf · Gomaringen, DE
Roman Schlosser · Waldkirch, DE

Key dates

Filing date	Aug 4, 2011
Grant date	Feb 11, 2014
Priority date	—
Expiry date	Aug 4, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method is described for filling cavities in wafers, the cavities being open to a predetermined surface of the wafer, including the following steps: applying a lacquer-like filling material to the predetermined surface of the wafer; heating the wafer at a first temperature; driving out gas bubbles enclosed in the filling material by heating the wafer under vacuum at a second temperature which is equal to or higher than the first temperature; and curing the filling material by heating the wafer at a third temperature which is higher than the second temperature. Furthermore, also described is a blind hole filled using such a method and general 3D cavities as well as a wafer having insulation trenches of a silicon via filled using such a method.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.