Joining method and device produced by this method and joining unit
US8651363B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 16, 2011 |
| Grant date | Feb 18, 2014 |
| Priority date | — |
| Expiry date | Nov 16, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/02375
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A practical bonding technique is provided for solid-phase room-temperature bonding not requiring a profile irregularity of the order of several nanometers, in which a high-vacuum energy wave treatment and continuous high-vacuum bonding are not required. Since an adhering substance layer is thin immediately after a surface activating treatment using an energy wave, a bonding interface is spread by crushing the adhering substance layer to perform bonding, so that a new surface appears on a bonding surface, and objects to be bonded are bonded together. In order to crush the adhering substance layer more easily, a bonding metal of a bonding portion of the object to be bonded requires a low hardness. According to the results of various experiments conducted by the present inventors, it was found that the hardness of the bonding portion which is a Vickers hardness of 200 Hv or less is particularly effective for room-temperature bonding.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.