Scalable, high-throughput, multi-chamber epitaxial reactor for silicon deposition
US8652259B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2009 |
| Grant date | Feb 18, 2014 |
| Priority date | — |
| Expiry date | Oct 3, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/165
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
One embodiment provides an apparatus for material deposition. The apparatus includes a reaction chamber, and a pair of susceptors. Each susceptor has a front side and a back side, and the front side mounts substrates. The susceptors are positioned vertically in such a way that the front sides of the susceptors face each other, and the vertical edges of the susceptors are in contact with each other, thereby forming a substantially enclosed narrow channel between the substrates. The apparatus also includes a number of gas nozzles for injecting reaction gases. The gas nozzles are controlled in such a way that gas flow directions inside the chamber can be alternated, thereby facilitating uniform material deposition. The apparatus includes a number of heating units situated outside the reaction chamber. The heating units are arranged in such a way that they radiate heat energy directly to the back sides of the susceptors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.