Implanting method for forming photodiode
US8652868B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2012 |
| Grant date | Feb 18, 2014 |
| Priority date | — |
| Expiry date | Mar 1, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
Abstract
An implanting method for forming a photodiode comprises providing a substrate with a first conductivity, growing an epitaxial layer on the substrate, implanting ions with a second conductivity in the epitaxial layer from a front side of the substrate and implanting ions with the first conductivity in the epitaxial layer from the front side of the substrate to form a photo active region adjacent to the front side and a photo inactive region underneath the photo active region. By employing the implanting method, an average doping density of the photo active region is approximately ten times more than an average doping density of the photo inactive region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.