Methods of forming a nonvolatile memory cell and methods of forming an array of nonvolatile memory cells array of nonvolatile memory cells

US8652909B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Scott E. Sills · Boise, US
• Gurtej S. Sandhu · Boise, US

Key dates

• Filing date: Jun 25, 2012
• Grant date: Feb 18, 2014
• Expiry date: Jun 25, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/884

Abstract

A method of forming a nonvolatile memory cell includes forming a first electrode and a second electrode of the memory cell. Sacrificial material is provided between the first second electrodes. The sacrificial material is exchanged with programmable material. The sacrificial material may additionally be exchanged with select device material.