Processing method for forming structure including amorphous carbon film
US8652973B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 31, 2012 |
| Grant date | Feb 18, 2014 |
| Priority date | — |
| Expiry date | May 31, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A processing method for forming a structure including an amorphous carbon film includes performing a preliminary treatment of removing water from a surface of the underlying layer by heating the inside of the reaction chamber at a preliminary treatment temperature of 800 to 950° C. and supplying a preliminary treatment gas selected from the group consisting of nitrogen gas and ammonia gas into the reaction chamber while exhausting gas from inside the reaction chamber; and, then performing main CVD of forming an amorphous carbon film on the underlying layer by heating the inside of the reaction chamber at a main process temperature and supplying a hydrocarbon gas into the reaction chamber while exhausting gas from inside the reaction chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.