Isolation structure, non-volatile memory having the same, and method of fabricating the same

US8653592B2 · kind B2 · utility

Assignee

• MACRONIX INTERNATIONAL CO., LTD. · TW

Inventors

• Ming-Da Cheng · Zhubei City, TW
• Chin-Tsan Yeh · Hsinchu, TW
• Tuung Luoh · Hsinchu, TW
• Chin-Ta Su · Erlun, TW
• Ta-Hung Yang · Hsinchu, TW
• Kuang-Chao Chen · Hsinchu, TW

Key dates

• Filing date: Nov 8, 2011
• Grant date: Feb 18, 2014
• Expiry date: Jan 16, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76205
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of forming an isolation structure, comprising: (a) providing a base having a recess; (b) forming a stop layer on the base and in the recess; (c) forming a dielectric material on the stop layer so as to allow the rest of the recess to be filled with the dielectric material; (d) removing the dielectric material over the base by performing a chemical mechanical polishing (CMP) process until a part of the stop layer is exposed so as to form a dielectric layer in the recess; and (e) removing a part of the stop layer, wherein the another part of the stop layer and the dielectric layer filled in the recess constitute the isolation structure.