Charge pump control scheme for memory word line
US8654589B2 · kind B2 · utility
2Cited by
4References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2010 |
| Grant date | Feb 18, 2014 |
| Priority date | — |
| Expiry date | Jun 7, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C8/08
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory includes a word line, a charge pump coupled to the word line, and a charge pump control circuit coupled to the charge pump. The charge pump control circuit is configured to turn on the charge pump if the word line voltage is lower than a first threshold voltage and turn off the charge pump if the word line voltage is higher than a second threshold voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.