Etching composition for metal material and method for manufacturing semiconductor device by using same
US8658053B2 · kind B2 · utility
0Cited by
7References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2006 |
| Grant date | Feb 25, 2014 |
| Priority date | — |
| Expiry date | May 13, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed is an etchant composition employed for selectively etching a metallic material in production of a semiconductor device, which is an aqueous solution containing a fluorine compound, and a chelating agent having, in the molecular structure thereof, a phosphorus oxo-acid as a functional group; or is an aqueous solution containing a fluorine compound, a chelating agent having, in the molecular structure thereof, a phosphorus oxo-acid as a functional group, and an inorganic acid and/or an organic acid. Also disclosed is a method for producing a semiconductor device employing the etchant composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.