Measurement of lateral diffusion of implanted ions in doped well region of semiconductor devices
US8658438B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2012 |
| Grant date | Feb 25, 2014 |
| Priority date | — |
| Expiry date | Dec 20, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a measurement of lateral diffusion of implanted ions in the doped well regions of semiconductor devices comprising: designing a test model having active areas, the P-type and N-type doped well regions of the active areas are separated by STI, and the bottom width of the STI is determined; performing multiple processes on the test model comprising the ion implantation process and the tungsten interconnection process to simulate a semiconductor device structure, wherein during the ion implantation process, in the P-type or N-type doped well regions, only the first procedure of the ion implantation process is performed; scanning the test model, obtaining a light-dark pattern of the tungsten interconnects. The present invention is convenient and accessible and can provide reference to optimize the property of the doped well regions of the semiconductor devices and ensure the yield enhancement.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.