Low temperature P+ polycrystalline silicon material for non-volatile memory device
US8658476B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 20, 2012 |
| Grant date | Feb 25, 2014 |
| Priority date | — |
| Expiry date | Apr 20, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a non-volatile memory device. The method includes providing a substrate having a surface region and forming a first dielectric material overlying the surface region of the substrate. A first electrode structure is formed overlying the first dielectric material and a p+ polycrystalline silicon germanium material is formed overlying the first electrode structure. A p+ polycrystalline silicon material is formed overlying the first electrode structure using the polycrystalline silicon germanium material as a seed layer at a deposition temperature ranging from about 430 Degree Celsius to about 475 Degree Celsius without further anneal. The method forms a resistive switching material overlying the polycrystalline silicon material, and a second electrode structure including an active metal material overlying the resistive switching material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.