Method of controlling trench microloading using plasma pulsing
US8658541B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2010 |
| Grant date | Feb 25, 2014 |
| Priority date | — |
| Expiry date | Oct 5, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/308
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus for controlling microloading, such as within cell microloading between adjacent cells or isolated/dense microloading between areas of isolated or dense features during shallow trench isolation (STI) fabrication processes, or other trench fabrication processes, are provided herein. In some embodiments, a method for fabricating STI structures may include providing a substrate having a patterned mask layer formed thereon corresponding to one or more STI structures to be etched; etching the substrate through the patterned mask layer using a plasma formed from a process gas to form one or more STI structure recesses on the substrate; and pulsing the plasma for at least a portion of etching the substrate to control at least one of a depth or width of the one or more STI structure recesses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.