Patent · US Active

Methods for pFET fabrication using APM solutions

US8658543B2 · kind B2 · utility

1Cited by

3References

7Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Joanna Wasyluk · Dresden, DE
Stephan Kronholz · Dresden, DE
Yew Tuck Chow · Singapore, SG
Richard J. Carter · Los Altos, US
Berthold Reimer · Dresden, DE
Kai Tern Sih · Dresden, DE

Key dates

Filing date	Feb 7, 2012
Grant date	Feb 25, 2014
Priority date	—
Expiry date	Feb 10, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/038
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for fabricating an integrated circuit is disclosed that includes, in accordance with an embodiment, providing an integrated circuit comprising a p-type field effect transistor (pFET), recessing a surface region of the pFET using an ammonia-hydrogen peroxide-water (APM) solution to form a recessed pFET surface region, and depositing a silicon-based material channel on the recessed pFET surface region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.