Plasma attenuation for uniformity control
US8659229B2 · kind B2 · utility
2Cited by
2References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 16, 2011 |
| Grant date | Feb 25, 2014 |
| Priority date | — |
| Expiry date | Aug 15, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32669
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus and method are disclosed which create a uniform plasma within an enclosure. In one embodiment, a conductive or ferrite material is used to influence a section of the antenna, where a section is made up of portions of multiple coiled segments. In another embodiment, a ferrite material is used to influence a portion of the antenna. In another embodiment, plasma uniformity is improved by modifying the internal shape and volume of the enclosure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.