Amorphous silicon RRAM with non-linear device and operation
US8659929B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 30, 2011 |
| Grant date | Feb 25, 2014 |
| Priority date | — |
| Expiry date | Aug 23, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/74
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory device includes a resistive switching device having a first electrode, a second electrode, and a resistive switching element, wherein the resistive switching element comprises a silicon material disposed in an overlapping region between the first electrode and the second electrode, wherein the second electrode comprises at least a metal material physically and electrically in contact with the resistive switching material, wherein the resistive switching element is characterized by a resistance depending on an electric field in the resistive switching element, and a non-linear device coupled between the first electrode and the resistive switching element, wherein the non-linear device is configured to conduct electric current when a voltage greater than a first voltage is applied to the second electrode, wherein the resistive switching device is configured to change from a first state to a second state in response to the first voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.