Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems

US8663390B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• David K. Carlson · San Jose, US
• Satheesh Kuppurao · San Jose, US
• Howard Beckford · San Jose, US
• Herman Diniz · Fremont, US
• Kailash Kiran Patalay · Santa Clara, US
• Brian H. Burrows · San Jose, US
• Jeffrey Ronald Campbell · San Francisco, US
• Zouming Zhu · Santa Clara, US
• Xiaowei Li · Shanghai, CN
• Errol Antonio C. Sanchez · Tracy, US

Key dates

• Filing date: Jul 1, 2011
• Grant date: Mar 4, 2014
• Expiry date: Nov 29, 2031

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T137/0318
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method and apparatus for delivering precursor materials to a processing chamber is provided. In one embodiment, a deposition apparatus is provided. The apparatus includes a chamber having a longitudinal axis, and a gas distribution assembly coupled to a sidewall of the chamber. The gas distribution assembly comprises a plurality of plenums coupled to one or more gas sources, an energy source positioned to provide energy to each of the plurality of plenums, and a variable power source coupled to the energy source, wherein the gas distribution assembly provides a flow path through the chamber that is normal to the longitudinal axis of the chamber.