Titanium target for sputtering
US8663440B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2010 |
| Grant date | Mar 4, 2014 |
| Priority date | — |
| Expiry date | Aug 19, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC22F1/183
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The object of this invention is to provide a high quality titanium target for sputtering capable of reducing the impurities that cause generation of particles and abnormal discharge, which is free from fractures and cracks during high power sputtering (high rate sputtering), and capable of stabilizing the sputtering properties and effectively suppressing the generation of particles upon deposition. This invention is able to solve foregoing problems using a high purity titanium target for sputtering containing, as additive components, 3 to 10 mass ppm of S and 0.5 to 3 mass ppm of Si, and in which the purity of the target excluding additive components and gas components is 99.995 mass percent or higher.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.