Semiconductor element formed in a crystalline substrate material and comprising an embedded in situ doped semiconductor material

US8664049B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Stephan Kronholz · Dresden, DE
• Roman Boschke · Dresden, DE
• Vassilios Papageorgiou · Austin, US
• Maciej Wiatr · Dresden, DE

Key dates

• Filing date: May 10, 2010
• Grant date: Mar 4, 2014
• Expiry date: Oct 1, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/811

Abstract

The PN junction of a substrate diode in a sophisticated SOI device may be formed on the basis of an embedded in situ doped semiconductor material, thereby providing superior diode characteristics. For example, a silicon/germanium semiconductor material may be formed in a cavity in the substrate material, wherein the size and shape of the cavity may be selected so as to avoid undue interaction with metal silicide material.