Patent · US Active

Method of producing nitride nanowires with different core and shell V/III flow ratios

US8664094B2 · kind B2 · utility

6Cited by

13References

13Claims

0Family size

Assignee

QUNANO AB · SE

Inventors

Werner Seifert · Bargteheide, DE
Damir Asoli · Malmö, SE
Zhaoxia Bi · Lund, SE

Key dates

Filing date	Oct 18, 2012
Grant date	Mar 4, 2014
Priority date	—
Expiry date	Oct 18, 2032

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S977/932
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.