Selective deposition of polymer films on bare silicon instead of oxide surface
US8664126B2 · kind B2 · utility
2Cited by
3References
22Claims
0Family size
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Inventor
Key dates
| Filing date | Apr 26, 2012 |
| Grant date | Mar 4, 2014 |
| Priority date | — |
| Expiry date | Aug 28, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31155
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of selective deposition on silicon substrates having regions of bare silicon and regions of oxide formed thereon. The method includes placing the substrate on a wafer support inside a processing chamber, introducing a carbon-containing gas into the reactor, applying a bias to the substrate, generating a plasma from the hydrocarbon gas, implanting carbon ions into the regions of oxide on the substrate by a plasma doping process, and depositing a carbon-containing film on the bare silicon regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.