Method for supplying gas with flow rate gradient over substrate
US8664627B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2012 |
| Grant date | Mar 4, 2014 |
| Priority date | — |
| Expiry date | Aug 8, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T137/0318
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for supplying gas over a substrate in a reaction chamber wherein a substrate is placed on a pedestal, includes: supplying a first gas from a first side of the reaction chamber to a second side of the reaction chamber opposite to the first side; and adding a second gas to the first gas from sides of the reaction chamber other than the first side of the reaction chamber so that the second gas travels from sides of the substrate other than the first side in a downstream direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.