Schottky diode employing recesses for elements of junction barrier array

US8664665B2 · kind B2 · utility

Assignee

• Cree, Inc. · US

Inventors

• Jason Henning · Carrboro, US
• Qingchun Zhang · Cary, US
• Sei-Hyung Ryu · Cary, US
• Anant Agarwal · San Jose, US
• John Williams Palmour · Raleigh, US
• Scott Allen · Apex, US

Key dates

• Filing date: Sep 11, 2011
• Grant date: Mar 4, 2014
• Expiry date: Sep 11, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/13055

Abstract

The present disclosure generally relates to a Schottky diode that has a substrate, a drift layer provided over the substrate, and a Schottky layer provided over an active region of the substrate. A junction barrier array is provided in the drift layer just below the Schottky layer. The elements of the junction barrier array are generally doped regions in the drift layer. To increase the depth of these doped regions, individual recesses may be formed in the surface of the drift layer where the elements of the junction barrier array are to be formed. Once the recesses are formed in the drift layer, areas about and at the bottom of the recesses are doped to form the respective elements of the junction barrier array.