Semiconductor device with an oversized local contact as a Faraday shield
US8664717B2 · kind B2 · utility
0Cited by
18References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 9, 2012 |
| Grant date | Mar 4, 2014 |
| Priority date | — |
| Expiry date | Mar 2, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/371
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This application is directed to a semiconductor device with an oversized local contact as a Faraday shield, and methods of making such a semiconductor device. One illustrative device disclosed herein includes a transistor comprising a gate electrode and a source region, a source region conductor that is conductively coupled to the source region, a Faraday shield positioned above the source region conductor and the gate electrode and a first portion of a first primary metallization layer for an integrated circuit device positioned above and electrically coupled to the Faraday shield.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.