Method for producing a magnetic tunnel junction and magnetic tunnel junction thus obtained
US8669122B2 · kind B2 · utility
12Cited by
6References
8Claims
0Family size
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Key dates
| Filing date | May 20, 2011 |
| Grant date | Mar 11, 2014 |
| Priority date | — |
| Expiry date | May 20, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/16
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
According to this method for producing a magnetic tunnel junction, a film of a dielectric material capable of acting as a tunnel barrier is deposited between two nanocrystalline or amorphous magnetic films. The dielectric material constituting the tunnel barrier consists of an at least partially crystalline perovskite, and said material is deposited by ion beam sputtering in a vacuum chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.